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參數(shù)資料
| 型號(hào)： | IDTIDT71P79804267BQI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | 18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 |
| 中文描述： | 35.7流水線⑩二二氧化硅的DDR SRAM的爆裂2 |
| 文件頁(yè)數(shù)： | 15/23頁(yè) |
| 文件大?。?/td> | 641K |
| 代理商： | IDTIDT71P79804267BQI |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)當(dāng)前第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)
6.42
15
IDT71P79204 (2Mx8-Bit), 71P79104 (2Mx9-Bit), 71P79804 (1Mx18-Bit) 71P79604 (512Kx36-Bit)
18 Mb DDR II SIO SRAM Burst of 2 Commercial and Industrial Temperature Ranges
Timing Waveform of Combined Read and Write Cycles
6432 drw 09a
K
K
1
2
3
LD
A
Q
tKHCH
tKHKL
tKHIX
tIVKH
tKHAX
tAVKH
C
C
CQ
CQ
tCHQX
tCHQX1
tKLKH
tCHCQV
tCHCQX
R/
W
D
tDVKH
tDVKH
4
5
6
7
tKLKH
tKHKH
tKH
K
H
A2
A1
A0
A3
tKHDX
tKHDX
D20
tCHQV
tCHQX
tCHQV
tCQHQV
tKHCH
tKHKL
NOP
Read A0
(burst of 2)
Read A1
(burst of 2)
Write A3
(burst of 2)
Write A2
(burst of 2)
Read A4
(burst of 2)
D21
Q00
Q01
Q10
Q11
Q40
Q41
8
NOP
A4
D30
D31
Qx1
tCHQZ
tKHKH
tKH
K
H
tCHCQX
tCHCQV
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