參數(shù)資料
型號： IMF6
英文描述： Transistors
中文描述： 晶體管
文件頁數(shù)： 2/5頁
文件大?。?/td> 88K
代理商： IMF6
UMF6N
Transistors
!
Absolute maximum ratings
(Ta=25
°
C)
Tr1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
55~
+
150
°
C
Range of storage temperature
1 Single pulse P
W
=1ms
2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Tr2
Parameter
Symbol
V
DSS
V
GSS
I
D
100
1
I
DP
200
mA
I
DR
100
mA
Reverse drain
current
Total power dissipation
Channel temperature
Range of storage temperature
2/5
Limits
15
12
6
500
1.0
150(TOTAL)
150
1
2
Unit
V
V
V
mA
A
mW
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
1 PW
≤
10ms Duty cycle
≤
50%
2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
!
Electrical characteristics
(Ta=25
°
C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
I
DRP
P
D
Tch
Tstg
Limits
30
±
20
200
150(TOTAL)
150
55~
+
150
1
2
Unit
V
V
mA
mA
mW
°
C
°
C
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Pulsed
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
12
15
6
270
Typ.
100
Max.
100
100
250
680
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
Transition frequency
Collector output capacitance
f
T
260
6.5
MHz
pF
V
CE
=
2V, I
E
=
10mA, f
=
100MHz
I
C
=
1mA
I
C
=
10
μ
A
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
=
200mA, I
B
=
10mA
V
CE
=
2V, I
C
=
10mA
Cob
Tr2
Parameter
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
Min.
30
0.8
20
Typ.
5
7
Max.
±
1
1.0
1.5
8
13
Unit
μ
A
V
μ
A
V
ms
Conditions
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
C
iss
C
oss
C
rss
t
d(on)
13
9
4
15
pF
pF
pF
ns
V
DS
=
5V, V
GS
=
0V, f
=
1MHz
V
GS
=±
20V, V
DS
=
0V
I
D
=
10
μ
A, V
GS
=
0V
V
DS
=
30V, V
GS
=
0V
V
DS
=
3V, I
D
=
100
μ
A
I
D
=
10mA, V
GS
=
4V
I
D
=
1mA, V
GS
=
2.5V
V
DS
=
3V, I
D
=
10mA
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
R
DS(on)
Static drain-source
on-state resistance
|Y
fs
|
Forward transfer admittance
Rise time
Turn-off delay time
Fall time
t
r
35
80
80
ns
ns
ns
t
d(off)
t
f
I
D
=
10mA, V
DD
5V,
V
GS
=
5V, R
L
=
500
,
R
GS
=
10
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