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| 型號： | IMF6 |
| 英文描述： | Transistors |
| 中文描述： | 晶體管 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 88K |
| 代理商： | IMF6 |
UMF6N
Transistors
Tr2
4/5
0
1
2
3
4
5
0
0.05
0.1
0.15
D
D
DRAIN-SOURCE VOLTAGE : V
DS
(V)
3V
3.5V
2.5V
V
GS
=
1.5V
4V
2V
Ta
=
25
°
C
Pulsed
Fig.9 Typical output characteristics
0
4
0.1m
100m
D
GATE-SOURCE VOLTAGE : V
GS
(V)
1
10m
3
2
1m
0.2m
0.5m
2m
5m
50m
20m
200m
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
V
DS
=
3V
Pulsed
Fig.10 Typical transfer characteristics
50
0
0
1
1.5
2
G
G
CHANNEL TEMPERATURE : Tch (
°
C)
0.5
25
25
50
75
100
125
150
Fig.11 Gate threshold voltage vs.
channel temperature
V
DS
=
3V
I
D
=
0.1mA
Pulsed
0.001
1
2
50
S
O
D
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005 0.01 0.02
0.05
0.1
0.2
0.5
5
10
20
Fig.12 Static drain-source on-state
resistance vs. drain current (
Ι
)
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
V
GS
=
4V
Pulsed
0.001
1
2
50
S
O
D
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005 0.01 0.02
0.05
0.1
0.2
0.5
5
10
20
Fig.13 Static drain-source on-state
resistance vs. drain current (
ΙΙ
)
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
V
GS
=
2.5V
Pulsed
0
5
10
15
20
0
5
10
15
GATE-SOURCE VOLTAGE : V
GS
(V)
I
D
=
0.1A
S
O
D
)
Fig.14 Static drain-source on-state
resistance vs. gate-source
voltage
Ta
=
25
°
C
Pulsed
I
D
=
0.05A
50
0
25
150
0
3
6
9
CHANNEL TEMPERATURE : Tch (
°
C)
S
O
D
)
25
50
75
100
125
2
1
4
5
7
8
Fig.15 Static drain-source on-state
resistance vs. channel temperature
V
GS
=
4V
Pulsed
I
D
=
100mA
I
D
=
50mA
0.0001
0.001
0.01
0.02
0.5
F
A
DRAIN CURRENT : I
D
(A)
0.005
0.0002
0.0005 0.001
0.002
0.005
0.01
0.02
0.05
0.05
0.1
0.2
0.1
0.2
0.5
0.002
Ta
=
25
°
C
25
°
C
75
°
C
125
°
C
V
DS
=
3V
Pulsed
Fig.16 Forward transfer admittance vs.
drain current
200m
R
D
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Fig.17 Reverse drain current vs.
source-drain voltage (
Ι
)
V
GS
=
0V
Pulsed
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
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