參數(shù)資料
型號: IP113
英文描述: 10/100Base-T to 100Base-FX Converter
中文描述: 10/100至100Base - FX光纖轉(zhuǎn)換器
文件頁數(shù): 9/27頁
文件大?。?/td> 186K
代理商: IP113
IP113
PIN Description
(continued)
Pin no.
Testing Pins
54,55
Preliminary, Specification
subject to change without notice
9
IP113-DS-P07
Jul. 19, 2002
Label
Type
Description
TEST1, TEST2
IPL
Test mode selection
They are internally pulled low. They are recommended to be
connected to GND for normal operation
Test internal SRAM
It is valid to test internal SRAM only if both TEST1 and TEST0
are set to logic high. They are internally pulled low.
Scan mode
It is connected to GND in application circuit.
Scan enable
It is connected to GND in application circuit.
No connection
They should be left open for normal operation.
56,57
TEST_ISRAM[1:0]
IPL
83
TSM
I
84
TSE
I
1-3,7-9,11,12,
27-29,31,32,
60-72,75,76,87,
120,121,
123,125,126
Misc.
85
112
113
Power
5,25,43
10,20,30,37,127 VCC
14
49,50,53,58,79,
110,117,118
114
73
94
100
4,6,24,26,42
13,17,33,34,38,
124,128
16
44,46,48,51,52,
59,80,115,
116,119,122
111
74
95
101
NC
RESETB
X2
OSCI(X1)
I
O
I
Reset, low active
Crystal pin
25M system clock input
VCC
I
I
I
I
Tx VCC of analog circuit
Rx VCC of analog circuit
Band gap VCC of analog circuit
VCC of digital core
VCC
VCC
VCC
VCC_IO_2
VCC_SRAM
VCC_IO_1
GND
GND
I
I
I
I
I
I
VCC of crystal
VCC of digital I/O buffer
VCC of SRAM
VCC of digital I/O buffer
Tx GND of analog circuit
Rx GND of analog circuit
GND
GND
I
I
Band gap GND of analog circuit
GND of digital core
GND
GND_IO_2
GND_SRAM
GND_IO_1
I
I
I
I
GND of crystal
GND of digital I/O buffer
GND of SRAM
GND of digital I/O buffer
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