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參數(shù)資料
| 型號： | IR3103 |
| 廠商： | International Rectifier |
| 英文描述： | Half-Bridge FredFET and Integrated Driver |
| 中文描述： | 半橋FREDFET和集成驅(qū)動 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 208K |
| 代理商： | IR3103 |
www.irf.com
1
Features
Output Power FredFET in Half-Bridge Configuration
High Side Gate Drive Designed for Bootstrap Operation
Bootstrap Diode Integrated into Package
Lower Power Level-Shifting Circuit
Lower di/dt Gate Drive for Better Noise Immunity
Excellent Latch Immunity on All Inputs and Outputs
ESD Protection on All Leads
Isolation 1500 V
RMS
min.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. Power dissipation is measured under board mounted and still air
conditions.
IR3103
Series
0.75A, 500V
Half-Bridge FredFET
and Integrated Driver
Description
The IR3103 is a gate driver IC integrated with a half bridge FredFET designed for motor drive applications
up to 180W (heatsink-less). The sleek and compact single-in-line package is optimized for electronic motor
control in appliance applications such as fans and compressors for refrigerators. The IR3103 offers an
extremely compact, high performance half-bridge inverter in a single isolated package for two-phase and
three-phase motor drivers.
Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET
power FredFET
technology (HEXFET
MOSFET with ultra-fast recovery body diode characteristics), enable efficient and
rugged single package construction. Propagation delays for the high and low side power FredFETs are
matched thanks to advanced IC technology.
PD-96992 Rev.A
Parameter
Description
Max. Value
Units
V
DS
Drain to Source Blocking Voltage
500
V
V
DD
DC Bus Supply Voltage (No Switching Operation)
500
V
I
O
(T
A
=25°C)
Continuous Output Current (1)
0.7
A
I
O
(T
A
=55°C)
Continuous Output Current (1)
0.6
A
I
O
(T
A
=25°C)
Pulsed Output Current (2)
2.7
A
P
d
Package Power Dissipation @T
A
≤
55°C (3)
1.4
W
V
ISO
Isolation Voltage (1min)
1500
V
RMS
T
J
Junction Temperature (Power MOSFET)
-40 to +150
°C
T
S
Storage Temperature
-40 to +150
°C
T
L
Lead Temperature (soldering, 10 seconds)
300
°C
T
S
Storage Temperature
-40 to +150
°C
Note 1: See figure 3, f
PWM
=16kHz
Note 2: T
P
=100ms, other conditions as per Figure 3, f
PWM
=16kHz
Note 3: Single Device Operating
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