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參數(shù)資料
| 型號(hào)： | IR3103 |
| 廠商： | International Rectifier |
| 英文描述： | Half-Bridge FredFET and Integrated Driver |
| 中文描述： | 半橋FREDFET和集成驅(qū)動(dòng) |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大小： | 208K |
| 代理商： | IR3103 |
IR3103
www.irf.com
3
Symbol
Parameter
Min
Typ
Max
Units
V
(BR)DSS
Drain-to-Source Breakdown
Voltage
500
---
---
V
V
IN
=0V, I
DD
/I
O
=250μA
---
5
50
V
DS
=500V, V
IN
=0V
---
80
---
V
DS
=500V, V
IN
=0V, T
J
=150°C
---
5
105
V
DS
=500V, V
IN
=0V
---
100
---
V
DS
=500V, V
IN
=0V, T
J
=150°C
R
DS(ON)
Drain-to-Source ON Resistance
---
1.9
2.5
I
O
= 0.75A, V
IN
=5V
V
SD
Diode Forward Voltage
---
0.8
0.9
V
I
O
= 0.75A, V
IN
=0V
R
DS(ON)
Drain-to-Source ON Resistance
---
4.3
6.5
I
O
= 0.75A, V
IN
=5V, T
J
=150°C
V
SD
Diode Forward Voltage
---
0.6
0.75
V
I
O
= 0.75A, V
IN
=0V, T
J
=150°C
---
---
1.25
---
---
1.10
E
ON
Turn-On Energy Losses
---
55
75
μJ
E
OFF
Turn-Off Energy Losses
---
4
10
μJ
E
TOT
Total Energy Losses
---
59
85
μJ
E
REC
Body-Diode Reverse Recovery
Losses
---
2
5
μJ
t
RR
Reverse Recovery Time
---
70
---
ns
E
ON
Turn-On Energy Losses
---
85
115
μJ
E
OFF
Turn-Off Energy Losses
---
5
11
μJ
E
TOT
Total Energy Losses
---
90
126
μJ
E
REC
Body-Diode Reverse Recovery
Losses
---
6
11
μJ
t
RR
Reverse Recovery Time
---
90
---
ns
Q
G
Turn-ON MOSFET Gate Charge
---
15
21
nC
C
OSS
Output Capacitance
---
12
---
pF
C
OSS
eff.
Effective Output Capacitance
---
30
---
pF
SCSOA
Short Circuit Safe Operating
Area
10
---
---
μs
I
SC
Short Circuit Drain Current
---
18.5
---
A
μA
μA
I
HS-LK
I
LS-LK
Low Side Leakage Current
Low Side Leakage Current
I
F
=1A, T
J
=125°C
Note 5: Characterized on FREDFET die level, not measured at EOL
Note 6: C
OSS
eff. is a fixed capacitance that gives same charging time as C
OSS
while V
DS
is rising from 0 to 80% V
DSS
.
V
DD
=400V, f=1MHz. Note 5
V
BDFM
Bootstrap Diode Forward
Voltage Drop
V
Half Bridge Electrical Characteristics @T
J
= 25°C
V
CC
=V
BO
=15V and T
J
=25°C unless otherwise specified. V
DD
and V
IN
parameters referenced to COM
Conditions
I
DD
/I
O
= 0.75A, V
DD
=300V,
V
BO
/V
CC
=15V, L= 6.3mH
Energy Losses include Body-Diode
Reverse Recovery
T
J
=150°C, V
P
=450V,
V
+
= 320V,V
CC
=+15V
T
J
=150°C, V
P
=450V, t
SC
<10μs
V
+
= 320V, V
GE
=15V, V
CC
=+15V
I
DD
/I
O
= 0.75A, V
DD
=300V,
V
BO
/V
CC
=15V, L=6.3mH
T
J
=150°C
Energy Losses include Body-Diode
Reverse Recovery
V
DD
=0V to 400V. Note 5,6
V
DD
=250V, I
O
=3.2A. Note 5
I
F
=1A
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