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參數(shù)資料
| 型號： | IR3103 |
| 廠商： | International Rectifier |
| 英文描述： | Half-Bridge FredFET and Integrated Driver |
| 中文描述： | 半橋FREDFET和集成驅(qū)動 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 208K |
| 代理商： | IR3103 |
IR3103
6
www.irf.com
Typical Application Connection IR3103
1. Electrolytic bus capacitors should be mounted as close as possible to the module bus terminals to reduce ringing and
EMI problems. High frequency ceramic capacitors mounted close to the module pins will further improve performance.
2. In order to provide good decoupling between V
cc
-V
SS
and V
B
-V
O
terminals, a capacitor connected between these
terminals is recommended and should be located very close to the module pins. Additional high frequency capacitors,
typically 0.1mF, are strongly recommended.
3. Low inductance shunt resistor should be used for phase leg current sensing. Similarly, the length of the traces from
the pin to the corresponding shunt resistor should be kept as small as possible.
4. Value of the bootstrap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a or Figure 8.
5. Application conditions should guarantee minimum dead-time of 400ns
V
-
BUS
V
+
BUS
IC Driver
V
BUS
9
11
8
1
6
2
3
4
V
CC
H
IN
L
IN
V
SS
IR3103
IC Driver
V
BUS
9
11
8
1
6
2
3
4
V
CC
H
IN
L
IN
V
SS
IR3103
IC Driver
V
BUS
9
11
8
1
6
2
3
4
V
CC
H
IN
L
IN
V
SS
IR3103
M
COM
COM
COM
50% H
IN
/L
IN
50% V
CE
I
C
V
CE
H
IN
/L
IN
90% I
C
10% I
C
T
OFF
t
f
I
C
V
CE
H
IN
/L
IN
50%
H
IN
/L
IN
90% I
C
50% V
CE
10% I
C
t
r
T
ON
Figure 2. T
ON
and T
OFF
Definitions.
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