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參數(shù)資料
| 型號(hào)： | IRF1312STRL |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 95A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 80V的五（巴西）直| 95A章一（d）|對(duì)263AB |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 226K |
| 代理商： | IRF1312STRL |
Notes
www.irf.com
through
are on page 11
1
HEXFET Power MOSFET
V
DSS
80V
R
DS(on)
max
10m
I
D
95A
PD- 94504
Absolute Maximum Ratings
High frequency DC-DC converters
Motor Control
Uninterrutible Power Supplies
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
D
2
Pak
IRF1312S
TO-220AB
IRF1312
TO-262
IRF1312L
IRF1312
IRF1312S
IRF1312L
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.73
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
°C/W
Parameter
Max.
95
67
380
3.8
210
1.4
± 20
5.1
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm)
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
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| IRF1312 | HEXFET Power MOSFET |
| IRF1312L | HEXFET Power MOSFET |
| IRF1312S | HEXFET Power MOSFET |
| IRF1312STRR | TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 95A I(D) | TO-263AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1312STRR | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 95A I(D) | TO-263AB |
| IRF131R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 14A I(D) | TO-204AA |
| IRF132 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| IRF1324LPBF | 功能描述:MOSFET 24V 1 N-CH HEXFET 1.65mOhms 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1324PBF | 功能描述:MOSFET MOSFT 24V 353A 1.5mOhm 160nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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