參數(shù)資料
型號: IRF1312S
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 1/11頁
文件大?。?/td> 226K
代理商: IRF1312S
Notes
www.irf.com
through
are on page 11
1
HEXFET Power MOSFET
V
DSS
80V
R
DS(on)
max
10m
I
D
95A
PD- 94504
Absolute Maximum Ratings
High frequency DC-DC converters
Motor Control
Uninterrutible Power Supplies
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
D
2
Pak
IRF1312S
TO-220AB
IRF1312
TO-262
IRF1312L
IRF1312
IRF1312S
IRF1312L
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.73
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
°C/W
Parameter
Max.
95
67
380
3.8
210
1.4
± 20
5.1
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm)
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
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