參數(shù)資料
型號(hào): IRF1405L
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 55V的,的Rds(on)\u003d 5.3mohm,身份證\u003d 131A章)
文件頁(yè)數(shù): 11/11頁(yè)
文件大小: 154K
代理商: IRF1405L
IRF1405S/L
www.irf.com
11
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.11mH
R
G
= 25
, I
AS
= 101A. (See Figure 12).
I
SD
101A, di/dt
210A/μs, V
DD
V
(BR)DSS
,
T
J
175°C
Pulse width
400μs; duty cycle
2%.
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
D
2
Pak Tape & Reel Information
TRR
3
4
4
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
1/01
相關(guān)PDF資料
PDF描述
IRF1405S Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
IRF1405PBF AUTOMOTIVE MOSFET
IRF1405ZL-7PPBF HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 120A )
IRF1405ZS-7PPBF HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 120A )
IRF1405Z AUTOMOTIVE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF1405LPBF 功能描述:MOSFET MOSFT 55V 131A 5.3mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF1405PBF 功能描述:MOSFET MOSFT 55V 133A 5.3mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF1405S 功能描述:MOSFET N-CH 55V 131A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF1405SHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK
IRF1405SPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube