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參數(shù)資料
| 型號： | IRF1902PBF |
| 廠商： | International Rectifier |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.0 to 5.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 144K |
| 代理商： | IRF1902PBF |
2
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Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.5A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
38
42
1.2
57
63
V
ns
nC
Source-Drain Ratings and Characteristics
17
4.2
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
Surface mounted on 1 in square Cu board
Parameter
Min. Typ. Max. Units
20
–––
––– 0.019 –––
–––
–––
–––
–––
0.70
–––
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
–––
1.2
–––
1.8
–––
5.9
–––
13
–––
23
–––
19
–––
310
–––
130
–––
55
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 4.0A
V
GS
= 2.7V, I
D
= 3.2A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 4.0A
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
V
GS
= 12V
V
GS
= -12V
I
D
= 4.2A
V
DS
= 10V
V
GS
= 4.5V
V
DD
= 10V
I
D
= 1.0A
R
G
= 53
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
V/°C
85
170
–––
–––
1.0
25
100
-100
7.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
m
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
S
D
G
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