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參數(shù)資料
| 型號(hào)： | IRF1902PBF |
| 廠商： | International Rectifier |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.0 to 5.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 144K |
| 代理商： | IRF1902PBF |
4
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Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
1
2
4
5
6
0
1
2
4
5
6
Q , Total Gate Charge (nC)
V
G
I
=
D
4.0A
V
= 10V
DS
V
= 16V
DS
0.0
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
IS
TJ = 25°C
TJ = 150°C
VGS = 0V
1
10
100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
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