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參數(shù)資料
| 型號： | IRF520VPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 156K |
| 代理商： | IRF520VPBF |
IRF520VPbF
HEXFET
Power MOSFET
11/5/03
Parameter
Typ.
–––
0.50
–––
Max.
3.4
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 100V
R
DS(on)
= 0.165
I
D
= 9.6A
S
D
G
TO-220AB
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Lead-Free
Description
PD - 94819
Absolute Maximum Ratings
Parameter
Max.
9.6
6.8
37
44
0.29
± 20
9.2
4.4
7.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF520V | Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) |
| IRF5210L | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
| IRF5210S | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
| IRF5210 | Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A) |
| IRF5305PBF | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF520VS | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) |
| IRF520VSPBF | 制造商:International Rectifier 功能描述:MOSFET N D2-PAK 100V 9.6A |
| IRF520VSTRL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.6A I(D) | TO-263AB |
| IRF520VSTRR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.6A I(D) | TO-263AB |
| IRF521 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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