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參數(shù)資料
| 型號(hào)： | IRF520VPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 156K |
| 代理商： | IRF520VPBF |
IRF520VPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 9.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.2A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
83
220
1.2
120
330
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
9.6
37
A
Starting T
J
= 25°C, L = 1.0mH
R
G
= 25
, I
AS
= 9.2A, V
GS
=10V (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
≤
9.2A, di/dt
≤
360A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Parameter
Min. Typ. Max. Units
100
–––
–––
0.12
–––
––– 0.165
2.0
–––
1.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.9
–––
23
–––
30
–––
24
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 5.5A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 9.2A
V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 9.2A
R
G
= 18
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
I
AS
= 9.2A, L = 1.0mH
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
22
5.2
7.0
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
E
AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
–––
560
81
10
150
–––
–––
–––
44
pF
mJ
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
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相關(guān)代理商/技術(shù)參數(shù) |
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| IRF520VS | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) |
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| IRF520VSTRR | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.6A I(D) | TO-263AB |
| IRF521 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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