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參數(shù)資料
| 型號： | IRF630FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET |
| 中文描述： | ? -通道200伏- 0.35ihm - 9A條- TO-220/FP網(wǎng)眼密胺] MOSFET的 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 97K |
| 代理商： | IRF630FP |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF630, IRF630S
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.17. SOT404 : soldering pattern for surface mounting
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
17.5
11.5
9.0
5.08
3.8
2.0
August 1999
9
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF630 | 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs |
| IRF630 | Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) |
| IRF630 | N-Channel Power MOSFETs, 12A, 150-200 V |
| IRF640FI | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-220VAR |
| IRF640ST4 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF630H | 制造商:HAR 功能描述:IRF630 HARRIS |
| IRF630I | 制造商:IR 功能描述:IRF630 I.R. |
| IRF630L | 功能描述:MOSFET N-CH 200V 9A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF630M | 制造商:ST 功能描述:N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFET |
| IRF630M_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 200V - 0.35ヘ - 9A - TO-220 /TO-220FP Mesh Overlay⑩ Power MOSFET |
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