參數(shù)資料
型號： IRF640S
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS transistor
中文描述： 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-404, D2PAK-3
文件頁數(shù)： 2/9頁
文件大小： 95K
代理商： IRF640S
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF640, IRF640S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 6.2 A;
t
p
= 720
μ
s; T
j
prior to avalanche = 25C;
V
≤
25 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig;14
MIN.
-
MAX.
580
UNIT
mJ
I
AS
Peak non-repetitive
avalanche current
-
16
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
1.1
K/W
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
60
50
-
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
200
178
2
1
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
3
4
-
-
6
130
180
-
522
10
100
0.05
10
-
250
-
63
-
12
-
35
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
Gate source leakage current V
GS
=
±
20 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V
GS
= 10 V; I
D
= 8 A
m
m
nA
μ
A
μ
A
nC
nC
nC
T
j
= 175C
I
GSS
I
DSS
V
DS
= 200 V; V
GS
= 0 V;
V
DS
= 160 V; V
GS
= 0 V; T
j
= 175C
I
D
= 18 A; V
DD
= 160 V; V
GS
= 10 V
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
DD
= 100 V; R
= 5.6
;
V
= 10 V; R
G
= 5.6
Resistive load
-
-
-
-
-
-
12
45
54
38
3.5
4.5
-
-
-
-
-
-
ns
ns
ns
ns
nH
nH
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1850
170
91
-
-
-
pF
pF
pF
August 1999
2
Rev 1.100
相關(guān)PDF資料
PDF描述
IRF640 N-channel TrenchMOS transistor(N溝道 TrenchMOS 晶體管)
IRF640 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
IRF640B 200V N-Channel MOSFET
IRF650A TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 28A I(D) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF640S2470 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF640S2497 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF640SPBF 功能描述:MOSFET N-Chan 200V 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF640ST4 功能描述:MOSFET N-Ch 200 Volt 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF640STRL 功能描述:MOSFET N-Chan 200V 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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