參數(shù)資料
型號(hào): IRF640S
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: N-channel TrenchMOS transistor
中文描述: 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SOT-404, D2PAK-3
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 95K
代理商: IRF640S
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF640, IRF640S
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
16
A
-
-
64
A
I
F
= 18 A; V
GS
= 0 V
I
F
= 18 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 25 V
-
-
-
1.0
130
0.8
1.5
-
-
V
ns
μ
C
August 1999
3
Rev 1.100
相關(guān)PDF資料
PDF描述
IRF640 N-channel TrenchMOS transistor(N溝道 TrenchMOS 晶體管)
IRF640 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
IRF640B 200V N-Channel MOSFET
IRF650A TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 28A I(D) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF640S2470 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF640S2497 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF640SPBF 功能描述:MOSFET N-Chan 200V 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF640ST4 功能描述:MOSFET N-Ch 200 Volt 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF640STRL 功能描述:MOSFET N-Chan 200V 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube