參數(shù)資料
型號: IRF7322D1PBF
廠商: International Rectifier
英文描述: FETKY MOSFET / Schottky Diode
中文描述: FETKY MOSFET的/肖特基二極管
文件頁數(shù): 1/8頁
文件大?。?/td> 198K
代理商: IRF7322D1PBF
www.irf.com
1
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Maximum
-5.3
-4.3
-43
2.0
1.3
16
± 12
-5.0
-55 to +150
Units
A
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Thermal Resistance Ratings
Co-packaged HEXFET
Power MOSFET
and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low V
F
Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
Lead-Free
IRF7322D1PbF
FETKY
MOSFET / Schottky Diode
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
I
SD
-2.9A, di/dt
-77A/μs, V
DD
V
(BR)DSS
, T
J
150°C
Pulse width
300μs; duty cycle
2%
Surface mounted on FR-4 board, t
10sec
Parameter
R
θ
JA
Maximum
62.5
Units
°C/W
Junction-to-Ambient
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Description
The
FETKY
family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
V
DSS
= -20V
R
DS(on)
= 0.058
Schottky Vf = 0.39V
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
SO-8
10/12/04
PD - 95298
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