參數(shù)資料
型號(hào)： IRF7331PbF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 1/9頁
文件大?。?/td> 129K
代理商： IRF7331PBF
Parameter
Max.
20
7.0
5.5
28
2.0
1.3
16
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
05/18/04
www.irf.com
1
IRF7331PbF
HEXFET Power MOSFET
R
DS(on)
max (m
30@V
GS
= 4.5V
45@V
GS
= 2.5V
PD - 95266
V
DSS
20V
I
D
7.0A
5.6A
SO-8
These N-Channel
HEXFET
power MOSFET
s from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
62.5
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
相關(guān)PDF資料
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IRF7342PBF HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) = 0.105ヘ)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7331PBF_08 制造商:IRF 制造商全稱:International Rectifier 功能描述:Ultra Low On-Resistance Dual N-Channel MOSFET
IRF7331TR 功能描述:MOSFET 2N-CH 20V 7A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
IRF7331TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 7A 8-Pin SOIC T/R
IRF7331TRPBF 功能描述:MOSFET MOSFT DUAL NCh 20V 7.0A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7331TRPBF-EL 制造商:International Rectifier 功能描述:
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