- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377506 > IRF7335D1 (International Rectifier) Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE PDF資料下載
參數(shù)資料
| 型號： | IRF7335D1 |
| 廠商： | International Rectifier |
| 英文描述： | Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE |
| 中文描述： | 雙FETKY共同封裝雙MOSFET普樂士肖特基二極管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 216K |
| 代理商： | IRF7335D1 |
Parameter
Max.
30
10
8.1
81
2.0
1.3
0.02
± 12
50
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
V
GS
E
AS
(6 sigma)
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Co-Pack Dual N-channel HEXFET
Power MOSFET
and Schottky Diode
Ideal for Synchronous Buck DC-DC
Converters Up to 11A Peak Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Dual FETKY
Description
The FETKY
family of Co-Pack HEXFET
MOSFETs and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and power management applications. Advanced
HEXFET
MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable
for a wide variety of portable electronics applications.
The SO-14 has been modified through a customized leadframe for enhanced thermal characteristics and
multiple die capability making it ideal in a variety of power applications. With these improvements multiple
devices can be used in an application with dramatically reduced board space. Internal connections enable
easier board layout design with reduced stray inductance.
Absolute Maximum Ratings
IRF7335D1
PD- 94546
Q1
Q2
and Schottky
9.6 m
18 nC
6.4 nC
0.43V
R
DS
(on)
Q
G
Q
sw
V
SD
13.4 m
13 nC
5.5 nC
1.0V
Symbol
R
θ
JL
R
θ
JA
Notes
Parameter
Typ.
Max.
20
62.5
Units
Junction-to-Drain Lead
Junction-to-Ambient
through are on page 12
°C/W
Thermal Resistance
D1
1
2
3
4
5
6
7
14
13
12
11
10
9
8
D1
G1
S2
S2
S2
G2
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
Q1
Q2
相關PDF資料 |
PDF描述 |
|---|---|
| IRF7338 | HEXFET Power MOSFET |
| IRF7341 | HEXFET Power MOSFET |
| IRF7342D2PBF | FETKY MOSFET & Schottky Diode |
| IRF7342PBF | HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) = 0.105ヘ) |
| IRF7350PBF | HEXFET㈢ Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7335D1HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 10A 14-Pin SOIC |
| IRF7335D1PBF | 制造商:International Rectifier 功能描述:MOSFET With Schottky Diode |
| IRF7335D1TR | 功能描述:MOSFET 2N-CH 30V 10A 14-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:FETKY™ 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| IRF7338 | 制造商:International Rectifier 功能描述:MOSFET DUAL NP SO-8 |
| IRF7338PBF | 功能描述:MOSFET 12V DUAL N- & P- CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。