參數(shù)資料
型號(hào)： IRF7342D2PBF
廠商： International Rectifier
英文描述： FETKY MOSFET & Schottky Diode
中文描述： FETKY MOSFET的
文件頁數(shù)： 1/11頁
文件大小： 207K
代理商： IRF7342D2PBF
Parameter
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum
-3.4
-2.7
-27
2.0
1.3
16
± 20
-5.0
-55 to +150
Units
A
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
W
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Thermal Resistance
Co-packaged HEXFET
Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low V
F
Schottky Rectifier
SO-8 Footprint
Lead-Free
Description
The
FETKY
TM
family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
IRF7342D2PbF
FETKY
MOSFET & Schottky Diode
Absolute Maximum Ratings
(T
A
= 25°C Unless Otherwise Noted)
V
DSS
= -55V
R
DS(on)
= 105m
Schottky Vf = 0.61V
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I
SD
≤
-3.4A, di/dt
≤
-150A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
400μs – duty cycle
≤
2%
Surface mounted on 1 inch square copper board, t
≤
10sec.
www.irf.com
SO-8
1
Symbol
R
θ
JL
R
θ
JA
R
θ
JA
Parameter
Typ.
–––
–––
–––
Max.
20
62.5
62.5
Units
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient
Junction-to-Ambient
, MOSFET
, SCHOTTKY
°C/W
PD- 95299
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7342D2PBF 制造商:International Rectifier 功能描述:MOSFET With Schottky Diode
IRF7342D2TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R
IRF7342D2TRPBF 制造商:International Rectifier 功能描述:-55V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 3.4A 8SOIC - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET P-CH 55V 3.4A 8-SOIC
IRF7342HR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 3.4A 8SOIC - Rail/Tube
IRF7342PBF 功能描述:MOSFET DUAL -55V P-CH 20V VGS 55V BVDSS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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