- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377506 > IRF7350PBF (International Rectifier) HEXFET㈢ Power MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF7350PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 320K |
| 代理商： | IRF7350PBF |
HEXFET
Power MOSFET
Description
These dual N and P channel HEXFET
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable
device for use in DC motor drives and load management applications.
6/10/04
www.irf.com
1
IRF7350PbF
SO-8
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
62.5
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
N-Ch P-Ch
V
DSS
100V -100V
R
DS(on)
0.21
0.48
D1
N-CHANNEL MOSFET
1
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
2
3
4
5
6
7
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety
of power applications. With these improvements, multiple devices can be
used in an application with dramatically reduced board space. The package
is designed for vapor phase, infra red, or wave soldering techniques.
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape and Reel
Lead-Free
Absolute Maximum Ratings
Max.
N-Channel
100
2.1
1.7
8.4
P-Channel
-100
-1.5
-1.2
-6.0
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
2.0
0.016
W
W/°C
mJ
V
V/ns
°C
E
AS
V
GS
dv/dt
T
J,
T
STG
35
± 20
4.0
51
± 20
4.3
-55 to + 150
PD - 95367
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7353D2PBF | MOSFET / Schottky Diode (VDSS = 30V , RDS(on) = 0.029ヘ , Schottky VF = 0.52V) |
| IRF7389 | HEXFET Power MOSFET |
| IRF7401PBF | HEXFET㈢ Power MOSFET |
| IRF7402PBF | HEXFET㈢ Power MOSFET |
| IRF7404QPBF | HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040ヘ ) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7350PBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:2W |
| IRF7350TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 100V 2.1A/1.5A 8-Pin SOIC T/R |
| IRF7350TRPBF | 功能描述:MOSFET MOSFT DUAL N/PCh 100V 2.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7351PBF | 功能描述:MOSFET 60V DUAL N-CH HEXFET 17.8mOhm 24nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7351PBF | 制造商:International Rectifier 功能描述:N CHANNEL MOSFET 60V 8A SOIC 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 60V, 8A, SOIC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。