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參數(shù)資料
| 型號(hào)： | IRF7353D2PBF |
| 廠商： | International Rectifier |
| 英文描述： | MOSFET / Schottky Diode (VDSS = 30V , RDS(on) = 0.029ヘ , Schottky VF = 0.52V) |
| 中文描述： | MOSFET的/肖特基二極管（減振鋼板基本\u003d 30V的，的RDS（on）\u003d 0.029ヘ，肖特基室顫\u003d 0.52V） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 131K |
| 代理商： | IRF7353D2PBF |
www.irf.com
1
Co-Pack HEXFET
Power MOSFET and
Schottky Diode
Ideal For Buck Regulator Applications
N-Channel HEXFET power MOSFET
Low V
F
Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
Lead-Free
IRF7353D2PbF
FETKY
PD- 95215A
MOSFET / Schottky Diode
Parameter
R
θ
JA
Maximum
62.5
Units
°C/W
Junction-to-Ambient
Thermal Resistance Ratings
Description
The
FETKY
family of Co-Pack HEXFET
Power MOSFETs and Schottky
diodes offers the designer an innovative, board space saving solution for
switching regulator and power management applications. Generation 5
HEXFET power MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combinining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
V
DSS
= 30V
R
DS(on)
= 0.029
Schottky V
F
= 0.52V
10/8/04
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Starting T
J
= 25°C, L = 10mH, R
G
= 25
, I
AS
= 4.0A
I
SD
≤
4.0A, di/dt
≤
74A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%
Surface mounted on FR-4 board, t
≤
10sec
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Maximum
6.5
5.2
52
2.0
1.3
16
± 20
-5.0
-55 to +150
Units
A
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
SO-8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7353D2PBFTR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R |
| IRF7353D2QPBF | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET COPACK WITH SCHOTTKY, 30V, 6.5A, 29 MOHM, - Rail/Tube |
| IRF7353D2QTRPBF | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET COPACK WITH SCHOTTKY, 30V, 6.5A, 29 MOHM, - Tape and Reel |
| IRF7353D2TR | 功能描述:MOSFET N-CH 30V 6.5A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7353D2TRPBF | 功能描述:MOSFET MOSFT w/Schttky 30V 6.5A 29mOhm 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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