參數(shù)資料
型號： IRF7353D2PBF
廠商： International Rectifier
英文描述： MOSFET / Schottky Diode (VDSS = 30V , RDS(on) = 0.029ヘ , Schottky VF = 0.52V)
中文描述： MOSFET的/肖特基二極管（減振鋼板基本\u003d 30V的，的RDS（on）\u003d 0.029ヘ，肖特基室顫\u003d 0.52V）
文件頁數(shù)： 2/8頁
文件大?。?/td> 131K
代理商： IRF7353D2PBF
IRF7353D2PbF
2
www.irf.com
Parameter
V
(BR)DSS
R
DS(on)
Min. Typ. Max. Units
30
—
—
0.023 0.029
—
0.032 0.046
1.0
—
—
14
—
—
—
—
—
—
—
—
—
22
—
2.6
—
6.4
—
8.1
—
8.9
—
26
—
18
—
650
—
320
—
130
Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
—
V
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 4.7A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 24V, I
D
= 5.8A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
V
GS
= 20V
V
GS
= -20V
I
D
= 5.8A
V
DS
= 24V
V
GS
= 10V (see figure 8)
V
DD
= -5V
I
D
= 1.0A
R
G
= 6.0
R
D
= 15
V
GS
= 0V
V
DS
= 25V
= 1.0MHz (see figure 7)
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
—
—
1.0
25
100
-100
33
3.9
9.6
12
13
39
26
—
—
—
V
S
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
μA
nA
ns
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
Min. Typ.
Max.
2.5
30
1.0
68
87
Units
A
Conditions
Continuous Source Current (Body Diode) —
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
—
—
0.78
45
58
—
—
—
—
V
ns
nC
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/μs
Parameter
Max. Units
3.2
2.0
200
20
Conditions
I
F (av)
Max. Average Forward Current
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5μs sine or 3μs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
I
SM
Max. peak one cycle Non-repetitive
Surge current
Following any rated
with Vrrm applied
Parameter
Max. Units
0.57
0.77
0.52
0.79
0.30
37
310
4900 V/μs Rated Vr
Conditions
V
FM
Max. Forward voltage drop
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C
Vr = 30V
.
I
rm
Max. Reverse Leakage current
Tj = 25°C
Tj = 125°C
C
t
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
pF
Vr = 5Vdc (100kHz to 1 MHz) 25°C
Schottky Diode Electrical Specifications
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
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