參數(shù)資料
型號: IRF7420PbF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 1/9頁
文件大?。?/td> 173K
代理商: IRF7420PBF
Parameter
Max.
-20
-11.5
-9.2
-46
2.5
1.6
20
±8
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to +150
8/11/04
www.irf.com
1
IRF7420PbF
HEXFET Power MOSFET
These P-Channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
Power MOSFETs from
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Parameter
Max.
50
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
SO-8
V
DSS
-12V
R
DS(on)
max
14m
@V
GS
= -4.5V
17.5m
@V
GS
= -2.5V
26m
@V
GS
= -1.8V
I
D
-
11.5A
-
9.8A
-
8.1A
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