參數(shù)資料
型號： IRF7757
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=20V)
中文描述： 功率MOSFET（減振鋼板基本\u003d 20V的）
文件頁數(shù)： 1/9頁
文件大?。?/td> 132K
代理商： IRF7757
Parameter
Max.
20
4.8
3.9
19
1.2
0.76
9.5
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
05/03/01
Parameter
Max.
105
Units
°
C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
Absolute Maximum Ratings
W
1
IRF7757
HEXFET
Power MOSFET
R
DS(on)
max (m
35@V
GS
= 4.5V
40@V
GS
= 2.5V
V
DSS
20V
)
I
D
4.8A
3.8A
TSSOP-8
Description
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Common Drain Configuration
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
8 = D
7 = D
6 = D
5 = D
1 = S1
2 = G1
3 = S2
4 = G2
4
3
2
1
5
6
7
8
PD - 94174
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IRF841 TRANSISTORS N-CHANNEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7757GPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET Ultra Low On-Resistance
IRF7757TR 功能描述:HEXFET TSSOP-8 RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
IRF7757TRPBF 功能描述:MOSFET MOSFT DUAL NCh 20V 4.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7759L2PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:RoHS Compliant, Halogen Free
IRF7759L2TR1PBF 功能描述:MOSFET 75V 160A 2.3mOhm 220nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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