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參數(shù)資料
| 型號(hào)： | IRFB23N15D |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 150伏時(shí)，RDS（on）的最大值\u003d 0.090ohm，身份證\u003d 23A條） |
| 文件頁數(shù)： | 11/11頁 |
| 文件大小： | 139K |
| 代理商： | IRFB23N15D |
IRFB/IRFS/IRFSL23N15D
www.irf.com
11
D
2
Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORM S TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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Data and specifications subject to change without notice. 6/00
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 2.7mH
R
G
= 25
, I
AS
= 14A.
I
SD
≤
14A, di/dt
≤
240A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
This is only applied to TO-220AB package
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相關(guān)代理商/技術(shù)參數(shù) |
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| IRFB23N15DHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB |
| IRFB23N15DPBF | 功能描述:MOSFET MOSFT 150V 23A 90mOhm 37nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB23N15DPBF | 制造商:International Rectifier 功能描述:N CH MOSFET 150V 23A TO-220AB |
| IRFB23N20D | 功能描述:MOSFET N-CH 200V 24A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFB23N20DHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB |
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