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參數(shù)資料
| 型號： | IRFB23N15D |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 150伏時(shí)，RDS（on）的最大值\u003d 0.090ohm，身份證\u003d 23A條） |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 139K |
| 代理商： | IRFB23N15D |
IRFB/IRFS/IRFSL23N15D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
2
www.irf.com
Parameter
Min. Typ. Max. Units
11
–––
–––
37 56 I
D
= 14A
–––
9.6
14
–––
19
29
–––
10
–––
–––
32
–––
–––
18
–––
–––
8.4
–––
–––
1200
–––
–––
260
–––
–––
65
–––
–––
1520
–––
–––
120
–––
–––
210
–––
Conditions
V
DS
= 25V, I
D
= 14A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 120V
V
GS
= 10V,
V
DD
= 75V
I
D
= 14A
R
G
= 5.1
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 120V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
260
14
13.6
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
T
J
= 25°C, I
F
= 14A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
150
0.8
1.3
220
1.2
V
ns
μC
Diode Characteristics
23
92
A
Min. Typ. Max. Units
150
–––
0.18 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
––– 0.090
V
GS
= 10V, I
D
= 14A
3.0
–––
5.5
V
V
DS
= V
GS
, I
D
= 250μA
–––
–––
25
μA
–––
–––
250
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
–––
–––
100
V
GS
= 30V
–––
–––
-100
V
GS
= -30V
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
V
DS
= 150V, V
GS
= 0V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
–––
0.50
–––
–––
Max.
1.1
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
°C/W
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