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參數(shù)資料
| 型號： | IRFB4710 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100伏時，RDS（on）的最大值\u003d 0.014ohm，身份證\u003d 75A條） |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 245K |
| 代理商： | IRFB4710 |
IRFB/IRFS/IRFL4710
2
www.irf.com
Parameter
Min. Typ. Max. Units
35
–––
–––
110 170 I
D
= 45A
–––
43
–––
–––
40
–––
–––
35
–––
–––
130
–––
–––
41
–––
–––
38
–––
–––
6160 –––
–––
440
–––
–––
250
–––
–––
1580 –––
–––
280
–––
–––
430
–––
Conditions
V
DS
= 50V, I
D
= 45A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 50V
V
GS
= 10V,
V
DD
= 50V
I
D
= 45A
R
G
= 4.5
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 80V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
190
45
20
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 45A, V
GS
= 0V
T
J
= 25°C, I
F
= 45A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
74
180
1.3
110
260
V
ns
nC
Diode Characteristics
75
300
A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.11 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
3.5
0.011 0.014
–––
–––
–––
–––
–––
V
V
GS
= 10V, I
D
= 45A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 95V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
5.5
1.0
250
100
-100
μA
–––
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
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