- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377513 > IRFB52N15 (International Rectifier) Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) PDF資料下載
參數(shù)資料
| 型號： | IRFB52N15 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 150伏時，RDS（on）的最大值\u003d 0.032ohm，身份證\u003d 50A條） |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 134K |
| 代理商： | IRFB52N15 |
IRFB/IRFS/IRFSL52N15D
www.irf.com
11
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25
°
C, L = 0.72mH
R
G
= 25
, I
AS
= 36A.
I
SD
≤
36A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
This is only applied to TO-220AB package.
D
2
Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORM S TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRFB52N15D),
& Industrial (IRFS/SL52N15D) market.
Qualification Standards can be found on IR
’
s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
12/01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFS52N15D | Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) |
| IRFB52N15D | Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) |
| IRFU014 | Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) |
| IRFR014 | Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) |
| IRFU120TR | HEXFET POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFB52N15D | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) |
| IRFB52N15DPBF | 功能描述:MOSFET MOSFT 150V 60A 32mOhm 60nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB5615PBF | 功能描述:MOSFET Audio MOSFT 150V 34A 41mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB5615PBF | 制造商:International Rectifier 功能描述:MOSFET CLASS D 150V TO220AB |
| IRFB5615PBF | 制造商:International Rectifier 功能描述:N CH MOSFET 150V 35A TO-220AB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。