參數(shù)資料
型號: IRFIB5N50L
廠商: International Rectifier
英文描述: MOTOR Control Application
中文描述: 電機(jī)控制中的應(yīng)用
文件頁數(shù): 1/9頁
文件大小: 185K
代理商: IRFIB5N50L
IRFIB5N50L
08/19/04
www.irf.com
1
SMPS MOSFET
HEXFET Power MOSFET
V
DSS
R
DS(on)
typ.
Trr
typ.
500V
0.67
TO-220 Full-Pak
S
D
G
Features and Benefits
!
"
Applications
#$
%$
&$
#'
I
D
73ns
4.7A
Absolute Maximum Ratings
Parameter
Max.
4.7
3.0
16
42
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Continuous Drain Current, V
GS
@ 10V
A
W
Linear Derating Factor
Gate-to-Source Voltage
0.33
±30
W/°C
V
V
GS
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
19
V/ns
-55 to + 150
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
300 (1.6mm from case )
10lb in (1.1N m)
Min. Typ. Max. Units
–––
–––
Conditions
MOSFET symbol
4.7
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
I
SM
–––
–––
16
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
p-n junction diode.
T
J
= 25°C, I
S
= 4.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.0A
T
J
= 125°C, di/dt = 100A/μs
nC T
J
= 25°C, I
S
= 4.0A, V
GS
= 0V
T
J
= 125°C, di/dt = 100A/μs
A
T
J
= 25°C
V
SD
t
rr
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
73
99
200
360
6.7
1.5
110
150
310
540
10
V
ns
Q
rr
Reverse Recovery Charge
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
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