參數(shù)資料
型號(hào): IRFIZ48N
廠商: International Rectifier
英文描述: N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
中文描述: N溝道HEXFET功率MOSFET的(不適用溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 109K
代理商: IRFIZ48N
IRFIZ48N
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8.
Maximum Safe Operating
Area
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
1
10
100
C
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
20
Q , Total Gate Charge (nC)
40
60
80
100
V
G
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 32A
V = 44V
V = 28V
0.1
1
10
100
1000
0.2
0.6
V , Source-to-Drain Voltage (V)
1.0
1.4
1.8
2.2
2.6
T = 25°C
V = 0V
I
S
A
T = 175°C
1
10
100
1000
1
10
100
V , Drain-to-Source Voltage (V)
I
D
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
100μs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
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