參數(shù)資料
型號(hào)： IRFP247
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
中文描述： 14 A, 275 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 1/7頁
文件大?。?/td> 68K
代理商： IRFP247
5-1
Semiconductor
Features
15A and 14A, 275V and 250V
r
DS(ON)
= 0.28
and 0.34
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
275V, 250VDC Rated, 120VAC Line System Operation
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP244
TO-247
IRFP244
IRFP245
TO-247
IRFP245
IRFP246
TO-247
IRFP246
IRFP247
TO-247
IRFP247
NOTE: When ordering, include the entire part number.
D
G
S
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
July 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
2211.2
IRFP244, IRFP245,
IRFP246, IRFP247
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
相關(guān)PDF資料
PDF描述
IRFP250 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管)
IRFP254 Standard Power MOSFET - N-Channel Enhancement Mode
IRFP254 Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)
IRFP264 N-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓250V,導(dǎo)通電阻0.075Ω的N溝道增強(qiáng)型標(biāo)準(zhǔn)功率MOSFET)
IRFP340 11A, 400V, 0.550 Ohm,N-Channel PowerMOSFET(11A, 400V, 0.550 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP250 功能描述:MOSFET N-Chan 200V 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250_R4941 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFP250B 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFP250B_FP001 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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