參數(shù)資料
型號: IRFP247
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
中文描述: 14 A, 275 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù): 4/7頁
文件大?。?/td> 68K
代理商: IRFP247
5-4
IRFP244, IRFP245, IRFP246, IRFP247
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50
75
100
25
150
15
12
9
0
6
I
D
,
3
IRFP245, IRFP247
125
IRFP244, IRFP246
10
1
0.1
10
-2
10
-2
10
-5
10
-4
10
-3
0.1
1
10
t
1
, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
2
P
DM
t
1
DUTY FACTOR: D = t
t
2
0.2
0.1
0.05
0.02
0.01
10
-3
0.5
Z
θ
J
,
T
10
2
10
1
10
10
2
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
μ
s
100
μ
s
1ms
DC
IRFP246,
IRFP247
10ms
IRFP244/246
IRFP245/247
10
3
T
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
IRFP244/246
IRFP245/247
IRFP244,
IRFP245
10
3
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
50
75
100
0
125
25
20
15
0
10
I
D
,
V
GS
= 5.5V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.0V
PULSE DURATION = 80
μ
s
5
V
GS
= 6.0V
V
GS
= 10V
相關PDF資料
PDF描述
IRFP250 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N溝道增強型功率MOS場效應管)
IRFP254 Standard Power MOSFET - N-Channel Enhancement Mode
IRFP254 Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)
IRFP264 N-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓250V,導通電阻0.075Ω的N溝道增強型標準功率MOSFET)
IRFP340 11A, 400V, 0.550 Ohm,N-Channel PowerMOSFET(11A, 400V, 0.550 Ohm,N溝道增強型功率MOS場效應管)
相關代理商/技術參數(shù)
參數(shù)描述
IRFP250 功能描述:MOSFET N-Chan 200V 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250_R4941 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFP250B 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFP250B_FP001 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube