參數(shù)資料
型號： IRFP247
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
中文描述： 14 A, 275 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 5/7頁
文件大?。?/td> 68K
代理商： IRFP247
5-5
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
0
10
25
20
15
0
10
I
D
,
PULSE DURATION = 80
μ
s
5
V
GS
= 10V
V
GS
= 5.5V
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 4.0V
V
GS
= 6.0V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
10
1
0.1
0
2
4
6
8
10
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
V
DS
≥
50V
60
I
D
, DRAIN CURRENT (A)
15
30
45
0
75
2.5
2.0
1.5
0
1.0
r
D
,
V
GS
= 20V
0.5
V
GS
= 10V
PULSE DURATION = 80
μ
s
O
)
3.0
1.8
0.6
80
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
2.4
1.2
0
0
60
120
160
O
-20
-40
20
40
100
140
I
D
= 10A
V
GS
= 10V
1.25
1.05
0.85
60
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
-20
20
100
160
B
0
-40
40
80
120 140
I
D
= 250
μ
A
1
10
100
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3000
2400
1800
1200
600
0
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
IRFP244, IRFP245, IRFP246, IRFP247
相關(guān)PDF資料
PDF描述
IRFP250 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N溝道增強型功率MOS場效應(yīng)管)
IRFP254 Standard Power MOSFET - N-Channel Enhancement Mode
IRFP254 Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)
IRFP264 N-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓250V,導通電阻0.075Ω的N溝道增強型標準功率MOSFET)
IRFP340 11A, 400V, 0.550 Ohm,N-Channel PowerMOSFET(11A, 400V, 0.550 Ohm,N溝道增強型功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP250 功能描述:MOSFET N-Chan 200V 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250_R4941 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFP250B 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFP250B_FP001 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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