參數(shù)資料
型號： IRFP250
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管)
中文描述： 33 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/7頁
文件大?。?/td> 55K
代理商： IRFP250
4-324
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP250
200
200
33
21
130
±
20
180
1.44
810
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
I
D
= 17A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
50V, I
D
= 17A (Figure 12)
V
DD
=
100V, I
D
=
30A, R
GS
= 6.2
,
V
GS
=
10V,
R
L
= 3.2
MOSFET Switching Times are Essentially
Independent of Operating Temperature
200
-
-
V
Gate Threshold Voltage
2.0
-
4.0
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
33
-
-
A
Gate to Source Leakage Current
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
0.07
0.085
Forward Transconductance (Note 2)
13
19
-
S
Turn-On Delay Time
-
18
30
ns
Rise Time
-
125
180
ns
Turn-Off Delay Time
-
70
100
ns
Fall Time
-
80
120
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 30A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA (Figure 14)
GateChargeisEssentiallyIndependentofOperating
Temperature
-
79
120
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
12
-
nC
Gate to Drain “Miller” Charge
-
42
-
nC
Input Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
2000
-
pF
Output Capacitance
-
800
-
pF
Reverse Transfer Capacitance
-
300
-
pF
Internal Drain Inductance
Measured from the Contact
Screw on Header Closer to
Source and Gate Pins to
Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 6.0mm (0.25in) from
Header to Source Bonding
Pad
-
12.5
-
nH
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
-
-
0.70
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
Free Air Operation
-
-
30
L
S
L
D
G
D
S
IRFP250
相關(guān)PDF資料
PDF描述
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IRFP340 11A, 400V, 0.550 Ohm,N-Channel PowerMOSFET(11A, 400V, 0.550 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管)
IRFP360 N-Channel EnhancementMode MegaMOSFET(最大漏源擊穿電壓400V,導(dǎo)通電阻0.20Ω的N溝道增強(qiáng)型MegaMOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP250_R4941 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFP250B 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFP250B_FP001 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP250B_FP001_Q 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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