參數(shù)資料
型號(hào): IRFP31N50L
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 500V及的Rds(on)典型.\u003d 0.15ohm,身份證\u003d 31A條)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 95K
代理商: IRFP31N50L
IRFP31N50L
05/23/01
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
500V
R
DS(on)
typ.
0.15
I
D
31A
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Low Trr and Soft Diode Recovery
High Performance Optimised Anti-parallel Diode
Absolute Maximum Ratings
Applications
Switch Mode Power Supply (SMPS)
UninterruptIble Power Supply
High Speed Power Switching
ZVS and High Frequency Circuit
PWM Inverters
TO-247AC
Parameter
Max.
31
20
124
460
3.7
± 30
19
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°
C
10 lbf
in (1.1N
m)
www.irf.com
1
S
D
G
Diode Characteristics
Symbol
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
A
Parameter
Min. Typ. Max. Units
–––
–––
Conditions
31
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 31A, V
GS
= 0V
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
–––
–––
124
–––
–––
–––
–––
–––
–––
–––
170
220
570
1.2
7.9
1.5
250
330
860
1.8
12
V
I
F
= 31A
di/dt = 100A/μs
nC
μC
A
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
ns
Typical SMPS Topologies
Bridge Converters
All Zero Voltage Switching
PD - 94081
相關(guān)PDF資料
PDF描述
IRFR3707PBF HEXFET㈢ Power MOSFET
IRFRU3707PBF HEXFET㈢ Power MOSFET
IRFR3708PBF HEXFET㈢Power MOSFET
IRFU3708PBF Replacement for Texas Instruments part number SN74LS138N. Buy from authorized manufacturer Rochester Electronics.
IRFR3709ZCPBF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP31N50LPBF 功能描述:MOSFET N-Chan 500V 31 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP3206PBF 功能描述:MOSFET MOSFT 60V 210A 3mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP32N50 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)
IRFP32N50K 功能描述:MOSFET N-Chan 500V 32 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP32N50K_04 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET