- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360955 > IRFP450LC (International Rectifier) 500V,14A,N-Channel HEXFET Power MOSFET(500V,14A,N溝道 HEXFET功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | IRFP450LC |
| 廠商： | International Rectifier |
| 英文描述： | 500V,14A,N-Channel HEXFET Power MOSFET(500V,14A,N溝道 HEXFET功率MOS場效應(yīng)管) |
| 中文描述： | 的500V，14A條，N溝道HEXFET功率MOSFET（500V及14A條，?溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 159K |
| 代理商： | IRFP450LC |
IRFP450LC
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
T
J
= 25°C, I
F
= 14A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
580
5.1
1.4
870
7.7
V
ns
μC
V
DD
= 25V, starting T
J
= 25°C, L = 7.0mH
R
G
= 25
, I
AS
= 14A. (See Figure 12)
I
SD
≤
14A, di/dt
≤
130A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
500
–––
–––
0.59
–––
–––
2.0
–––
8.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
49
–––
30
–––
30
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.4A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 8.4A
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 14A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 14A
R
G
= 6.2
R
D
= 17
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.40
4.0
–––
25
250
100
-100
74
19
35
–––
–––
–––
–––
V
V/°C
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2200
320
28
–––
–––
–––
pF
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
–––
56
–––
–––
14
A
nH
L
D
Internal Drain Inductance
–––
5.0
–––
L
S
Internal Source Inductance
–––
13
–––
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
μA
nA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGPC30KD2 | |
| IRGPC40K | |
| IRGPC40KD2 | |
| IRGPC46 | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247AC |
| IRGPC50 | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-247AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP450LCPBF | 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP450N | 制造商:International Rectifier 功能描述:MOSFET Transistor, N-Channel, TO-247AC |
| IRFP450NPBF | 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP450PBF | 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP450PBF | 制造商:Vishay Semiconductors 功能描述:MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。