參數(shù)資料
型號(hào): IRFR2307Z
廠商: International Rectifier
英文描述: AUTOMOTIVE MOSFET
中文描述: 汽車(chē)MOSFET的
文件頁(yè)數(shù): 7/11頁(yè)
文件大?。?/td> 300K
代理商: IRFR2307Z
www.irf.com
7
Fig 15.
Typical Avalanche Current vs.Pulsewidth
Fig 16.
Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
A
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses
tav
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
EA
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 32A
相關(guān)PDF資料
PDF描述
IRFU2307Z AUTOMOTIVE MOSFET
IRFR2605 Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
IRFU2605 Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
IRFR2905 AUTOMOTIVE MOSFET
IRFU2905Z AUTOMOTIVE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFR2307ZPBF 功能描述:MOSFET 75V 1 N-CH HEXFET 16mOhms 50nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR2307ZTRL 制造商:KERSEMI 制造商全稱(chēng):Kersemi Electronic Co., Ltd. 功能描述:Advanced Process Technology
IRFR2307ZTRLPBF 功能描述:MOSFET MOSFT 75V 53A 16mOhm 50nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR230A 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFR230B 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:200V N-Channel MOSFET