參數(shù)資料
型號： IRFR2407
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 75V的，的Rds（on）\u003d 0.026ohm，身份證\u003d 42A條）
文件頁數(shù)： 1/10頁
文件大?。?/td> 129K
代理商： IRFR2407
IRFR2407
IRFU2407
HEXFET
Power MOSFET
Seventh Generation HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
S
D
G
Parameter
Max.
42
29
170
110
0.71
± 20
130
25
11
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
V
DSS
= 75V
R
DS(on)
= 0.026
I
D
= 42A
Description
3/1/00
www.irf.com
1
l
Surface Mount (IRFR2407)
l
Straight Lead (IRFU2407)
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
PD -93862
D-Pak I-Pak
IRFR2407 IRFU2407
Parameter
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
Thermal Resistance
相關PDF資料
PDF描述
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IRFR3708 Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A)
IRFU3709PBF HEXFET㈢Power MOSFET
IRFU3711 RES 475-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA
IRFR3711 Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A)
相關代理商/技術參數(shù)
參數(shù)描述
IRFR2407PBF 功能描述:MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR2407TR 功能描述:MOSFET N-CH 75V 42A DPAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
IRFR2407TRL 功能描述:MOSFET N-CH 75V 42A DPAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
IRFR2407TRLPBF 功能描述:MOSFET MOSFT 75V 42A 26mOhm 74nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR2407TRPBF 功能描述:MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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