參數(shù)資料
型號(hào): IRFR3706
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份證\u003d 75A條)
文件頁數(shù): 10/10頁
文件大?。?/td> 133K
代理商: IRFR3706
IRFR/U3706
10
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.54mH
R
G
= 25
, I
AS
= 28A.
Notes:
Pulse width
400μs; duty cycle
2%.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN
REGIONAL CENTER:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
相關(guān)PDF資料
PDF描述
IRFR3706TRL TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 75A I(D) | TO-252AA
IRFR3706TRR TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 75A I(D) | TO-252AA
IRFR3707Z HEXFET Power MOSFET
IRFU3707Z HEXFET Power MOSFET
IRFR3709ZPBF LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 159; Grade: -3; Package: Lead-Free ftBGA; Pins: 256; Temp.: AUTO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFR3706C 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:SMPS MOSFET
IRFR3706CPBF 功能描述:MOSFET N-CH 20V 75A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFR3706CTRLPBF 功能描述:MOSFET N-CH 20V 75A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFR3706CTRR 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:High Frequency Isolated DC-DC Converters
IRFR3706CTRRPBF 功能描述:MOSFET N-CH 20V 75A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件