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參數(shù)資料
| 型號： | IRFRU5410 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 100V的，的Rds（on）\u003d 0.205ohm，身份證\u003d- 13A條） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 215K |
| 代理商： | IRFRU5410 |
IRFR/U5410
2
www.irf.com
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -7.8A, V
GS
= 0V
T
J
= 25°C, I
F
= -8.4A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
I
SM
V
SD
t
rr
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
130
650
-1.6
190
970
V
ns
nC
-13
-52
A
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
Starting T
J
= 25°C, L = 6.4mH
R
G
= 25
W
, I
AS
= -7.8A. (See Figure 12)
I
SD
￡
-7.8A, di/dt
￡
200A/μs, V
DD
￡
V
(BR)DSS
,
T
J
￡
150°C
Pulse width
￡
300μs; duty cycle
￡
2%.
S
D
G
Parameter
Min. Typ. Max. Units
-100
-0.12
0.205
-2.0
3.2
15
58
45
46
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -10V, I
D
= -7.8A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -50V, I
D
= -7.8A
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= -8.4A
V
DS
= -80V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= -8.4A
R
G
= 9.1
W
R
D
=6.2
W,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
V
V/°C
W
V
S
-4.0
-25
-250
100
-100
58
8.3
32
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
760
260
170
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Uses IRF9530N data and test conditions.
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