參數(shù)資料
型號： IRFS4227PBF
廠商： International Rectifier
英文描述： PDP SWITCH
中文描述： 等離子開關
文件頁數(shù)： 2/9頁
文件大?。?/td> 309K
代理商： IRFS4227PBF
2
www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
V
GS(th)
/
T
J
Gate Threshold Voltage Coefficient
I
DSS
Drain-to-Source Leakage Current
Min.
200
Typ.
–––
Max. Units
–––
V
–––
170
–––
mV/°C
m
V
–––
22
26
3.0
–––
5.0
–––
-13
–––
mV/°C
–––
–––
20
μA
–––
–––
1.0
mA
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
g
fs
Q
g
Q
gd
t
st
Forward Transconductance
49
–––
–––
S
Total Gate Charge
–––
70
98
nC
Gate-to-Drain Charge
–––
23
–––
Shoot Through Blocking Time
100
–––
–––
ns
E
PULSE
Energy per Pulse
μJ
C
iss
C
oss
C
rss
C
oss
eff.
L
D
Input Capacitance
–––
4600
–––
Output Capacitance
–––
460
–––
pF
Reverse Transfer Capacitance
–––
91
–––
Effective Output Capacitance
–––
360
–––
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Avalanche Characteristics
Parameter
Units
E
AS
E
AR
V
DS(Avalanche)
I
AS
Single Pulse Avalanche Energy
mJ
Repetitive Avalanche Energy
mJ
Repetitive Avalanche Voltage
V
Avalanche Current
A
Diode Characteristics
Parameter
Min.
–––
Typ.
–––
Max. Units
62
I
S
@ T
C
= 25°C Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
–––
–––
260
–––
–––
1.3
V
–––
100
150
ns
–––
430
640
nC
MOSFET symbol
V
DS
= 25V, I
D
= 46A
V
DD
= 100V, I
D
= 46A, V
GS
= 10V
Conditions
V
DD
= 160V, V
GS
= 15V, R
G
= 4.7
L = 220nH, C= 0.4μF, V
GS
= 15V
V
DS
= 160V, R
G
= 4.7
,
T
J
= 25°C
L = 220nH, C= 0.4μF, V
GS
= 15V
V
DS
= 160V, R
G
= 4.7
,
T
J
= 100°C
V
GS
= 0V
V
DS
= 25V
= 1.0MHz,
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 200V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 0V, V
DS
= 0V to 160V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 46A
T
J
= 25°C, I
F
= 46A, V
DD
= 50V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 46A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Typ.
Max.
–––
140
46
37
–––
–––
240
–––
–––
570
–––
–––
910
–––
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相關代理商/技術參數(shù)
參數(shù)描述
IRFS4227TRLPBF 功能描述:MOSFET MOSFT 200V 62A 26mOhm 70nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4228PBF 功能描述:MOSFET 150V 1 N-CH PDP SWITCH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4228TRLPBF 功能描述:MOSFET MOSFT 150V 83A 15mOhm 72nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4229PBF 功能描述:MOSFET 250V 1 N-CH HEXFET PDP SWITCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4229TRLPBF 功能描述:MOSFET MOSFT 250V 45A 48mOhm 72nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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