參數(shù)資料
型號: IRFSL3507PBF
廠商: International Rectifier
英文描述: HEXFET㈢Power MOSFET
中文描述: ㈢的HEXFET功率MOSFET
文件頁數(shù): 4/12頁
文件大?。?/td> 439K
代理商: IRFSL3507PBF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 10.
Drain-to-Source Breakdown Voltage
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 11.
Typical C
OSS
Stored Energy
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
IS
TJ = 25°C
TJ = 175°C
VGS = 0V
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
ID
Limited By Package
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
70
75
80
85
90
95
V(
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
E
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
EA
ID
TOP 8.9A
12A
BOTTOM58A
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
ID
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
DC
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