參數(shù)資料
型號: IRFU3711PBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 3/11頁
文件大?。?/td> 240K
代理商: IRFU3711PBF
www.irf.com
3
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
°
TOP
BOTTOM
VGS
15V
3.7V
3.3V
2.7V
V , Drain-to-Source Voltage (V)
I
D
2.7V
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
°
TOP
BOTTOM
VGS
15V
3.7V
3.0V
V , Drain-to-Source Voltage (V)
I
D
2.7V
10
100
1000
2.0
3.0
V , Gate-to-Source Voltage (V)
4.0
5.0
6.0
7.0
8.0
VDS
20μs PULSE WIDTH
I
D
T = 25 C
T = 150 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R
(
D
V
=
I =
GS
10V
110A
相關PDF資料
PDF描述
IRFR3711ZPBF Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.1 to 5.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
IRFU3711ZPBF Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.2 to 5.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
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