參數(shù)資料
型號： IRFU3711PBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/11頁
文件大?。?/td> 240K
代理商： IRFU3711PBF
2
www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Min
20
–––
–––
–––
1.0
–––
–––
–––
–––
–––
Typ
–––
0.022
5.2
6.7
–––
–––
–––
–––
–––
–––
Max Units
–––
–––
6.5
8.5
3.0
140
20
100
200
-200
V
V/°C
V
GS(th)
Gate Threshold Voltage
V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
g
fs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
Q
oss
Output Gate Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Min
53
–––
–––
–––
–––
0.3
–––
–––
–––
–––
–––
–––
–––
Typ
–––
29
7.3
8.9
33
–––
12
220
17
12
2980
1770
280
Max Units
–––
44
–––
–––
–––
2.5
–––
–––
–––
–––
–––
–––
–––
S
V
GS
= 0V, V
DS
=
10V
Avalanche Characteristics
Symbol
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Parameter
Units
mJ
A
Diode Characteristics
Symbol
Parameter
Min
Typ
Max Units
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
–––
–––
0.88
0.82
50
61
48
65
1.3
–––
75
92
72
98
t
rr
Q
rr
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
nC
Typ
–––
–––
440
V
Diode Forward Voltage
A
–––
110
–––
–––
I
S
I
SM
V
SD
–––
nA
ns
nC
pF
30
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
R
DS(on)
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
m
μA
T
J
= 125°C, I
F
= 16A, V
R
= 10V
di/dt = 100A/μs
T
J
= 125°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
R
= 10V
di/dt = 100A/μs
Conditions
Conditions
V
DS
= 16V, I
D
= 30A
I
D
= 15A
V
DS
= 10V
V
GS
= 4.5V
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 10V
= 1.0MHz
460
V
DS
= 20V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250μA
Max
V
DD
= 10V
I
D
= 30A
R
G
= 1.8
相關(guān)PDF資料
PDF描述
IRFR3711ZPBF Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.1 to 5.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
IRFU3711ZPBF Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.2 to 5.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
IRFR3910PBF HEXFET Power MOSFET
IRFU3910PBF HEXFET Power MOSFET
IRFR4104 Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFU3711Z 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRFU3711ZCPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRFU3711ZPBF 功能描述:MOSFET MOSFT 20V 93A 5.7mOhm 18nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU3711ZPBF 制造商:International Rectifier 功能描述:MOSFET
IRFU3806PBF 功能描述:MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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