參數(shù)資料
型號(hào): IRFU9N20D
廠商: International Rectifier
元件分類: DC/DC變換器
英文描述: N-Channel SMPS MOSFET,for High Frequency DC-DC Converters(應(yīng)用于高頻 DC-DC轉(zhuǎn)換器的N溝道開關(guān)模式電源MOS場(chǎng)效應(yīng)管)
中文描述: N溝道MOSFET的開關(guān)電源,高頻DC - DC變換器(應(yīng)用于高頻的DC - DC轉(zhuǎn)換器的?溝道開關(guān)模式電源馬鞍山場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 10/10頁(yè)
文件大?。?/td> 126K
代理商: IRFU9N20D
IRFR9N20D/IRFU9N20D
10
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 6.4mH
R
G
= 25
, I
AS
= 5.6A.
I
SD
5.6A, di/dt
110A/μs, V
DD
V
(BR)DSS
,
T
J
175°C
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
300μs; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFO RMS TO EIA-481 & EIA-541.
NO TES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
相關(guān)PDF資料
PDF描述
IRFRC20 Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)
IRFUC20 Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)
IRFRU024N Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)
IRFR024N Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)
IRFU024N Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFU9N20DPBF 功能描述:MOSFET N-CH 200V 9.4A I-PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFUC20 功能描述:MOSFET N-Chan 600V 2.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFUC20PBF 功能描述:MOSFET N-Chan 600V 2.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFV064 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-258AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 45A 3PIN TO-258AA - Bulk
IRFV064D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | TO-258VAR