參數(shù)資料
型號(hào): IRG4PC40W
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
中文描述: 絕緣柵雙極晶體管(VCES和\u003d 600V電壓的Vce(on)典型.\u003d 2.05V,@和VGE \u003d 15V的,集成電路\u003d 20A條)
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 145K
代理商: IRG4PC40W
www.irf.com
5
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
0
4
8
12
16
20
0
20
40
60
80
100
120
G
V
Q , Total Gate Charge (nC)
A
V = 400V
I = 27A
C
0.1
1
10
-60
-40
-20
T , Junction Temperature (
°
C)
0
20
40
60
80
100
120
140
160
T
A
R = 10
V = 15V
V = 480V
CC
I = 14A
I = 27A
I = 54A
C
GE
2.10
2.20
2.30
2.40
2.50
2.60
0
10
20
30
40
50
60
A
V = 480V
V = 15V
T = 25
°
C
I = 27A
R , Gate Resistance
()
T
0
1000
2000
3000
4000
1
10
100
V , Collector-to-Emitter Voltage (V)
A
C
ies
C
res
C
oes
V
GE
= 0V f = 1 MHz
Cies = Cge + Cgc + Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
C
相關(guān)PDF資料
PDF描述
IRG4PC40F INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
IRG4PC40KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
IRG4PC40S INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
IRG4PC40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
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