參數(shù)資料
型號(hào)： IRG4PC40WPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 絕緣柵雙極晶體管
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 621K
代理商： IRG4PC40WPBF
IRG4PC40WPbF
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
98
—
12
—
36
—
27
—
22
—
100
—
74
—
0.11
—
0.23
—
0.34 0.45
—
25
—
23
—
170
—
124
—
0.85
—
13
—
1900
—
140
—
35
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
147
18
54
—
—
150
110
—
—
I
C
= 20A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25°C
I
C
= 20A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
See Fig. 9,10, 14
mJ
—
—
—
—
—
—
—
—
—
T
J
= 150°C,
I
C
= 20A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
See Fig.10,11, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
mJ
nH
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
—
18
—
—
0.44
—
2.05
—
2.36
—
1.90
3.0
—
—
13
18
28
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
2.5
—
—
6.0
—
—
250
2.0
2500
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 20A V
GE
= 15V
I
C
= 40A
I
C
= 20A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
=
100 V, I
C
=20A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 10
,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
相關(guān)PDF資料
PDF描述
IRG4PC40 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
IRG4PC40F INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
IRG4PC40KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
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