參數(shù)資料
型號: IRG4PC40WPBF
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR
中文描述: 絕緣柵雙極晶體管
文件頁數(shù): 3/9頁
文件大?。?/td> 621K
代理商: IRG4PC40WPBF
IRG4PC40WPbF
www.irf.com
3
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
L
0
10
20
30
40
50
0.1
1
10
100
1000
f, Frequency (kHz)
A
60% of rated
voltage
Ideal diodes
S quare wave:
For both:
Duty cycle: 50%
TJ
Tsink
Gate drive as specified
Power D issipation = 28W
Triangular wave:
C lamp voltage:
80% of rated
1
10
100
1000
1.0
2.0
3.0
4.0
5.0
V , Collector-to-Emitter Voltage (V)
I
C
V = 15V
80μs PULSE WIDTH
T = 150 C
T = 25 C
°
1
10
100
1000
5
7
9
11
V , Gate-to-Emitter Voltage (V)
I
C
V = 50V
5μs PULSE WIDTH
T = 150 C
T = 25 C
相關(guān)PDF資料
PDF描述
IRG4PC40 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
IRG4PC40F INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
IRG4PC40KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
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